In order for textures in intrinsic antiferromagnets to be applied in proposed spintronics devices, localized and controllable writing is required. Here, the feasibility of a simple scheme for spin-Hall torque driven localized writing of chiral antiferromagnetic (AFM) domain wall (DW) pairs at a chosen location in AFM nano stripes is investigated. Short voltage pulses causing in-plane current-injection across transverse contacts in the heavy metal trigger a localized horizontal boundary-nucleated reverse AFM domain that propagates throughout the width to the opposite boundary, defining a locally written DW pair without affecting information in other parts of the device. The nucleation mechanism is examined, indicating exchange torque governing. A diagram of the number of DW-pairs written as a function of applied writing pulse amplitude and pulse duration is shown for a generic antiferromagnet, illustrating the degree of control required of the excitation protocol. Simulations of write and drive pulses are also presented, showing that the slight current bending around the writing contacts does not impose any significant pinning nor nucleation of unwanted textures for a typical driving amplitude. The advantages of this simple scheme are that it does not require any component for vertical spin-polarized current injection nor lasers for writing as in previous proposals.

中文翻译：

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具有面内横向电流的反铁磁纳米条纹中受控的局部畴壁写入

为了将内在反铁磁体中的纹理应用于所提出的自旋电子器件，需要局部和可控的写入。在这里，研究了自旋霍尔扭矩驱动的手性反铁磁 (AFM) 畴壁 (DW) 对在 AFM 纳米条纹中选定位置的局部写入的简单方案的可行性。短电压脉冲导致跨重金属横向接触的面内电流注入触发局部水平边界成核反向 AFM 域，该域在整个宽度上传播到相对边界，定义局部写入的 DW 对，而不影响其他部分的信息装置。检查成核机制，表明交换扭矩控制。显示了一般反铁磁体的 DW 对数量与应用写入脉冲幅度和脉冲持续时间的函数关系图，说明了激励协议所需的控制程度。还提供了写入和驱动脉冲的模拟，表明写入触点周围的轻微电流弯曲不会对典型的驱动幅度造成任何显着的钉扎或不想要的纹理的成核。这种简单方案的优点是它不需要任何用于垂直自旋极化电流注入的组件，也不需要像以前的提议那样用于写入的激光器。表明书写触点周围的轻微电流弯曲不会对典型的驱动幅度造成任何显着的钉扎或不想要的纹理的成核。这种简单方案的优点是它不需要任何用于垂直自旋极化电流注入的组件，也不需要像以前的提议那样用于写入的激光器。表明书写触点周围的轻微电流弯曲不会对典型的驱动幅度造成任何显着的钉扎或不想要的纹理的成核。这种简单方案的优点是它不需要任何用于垂直自旋极化电流注入的组件，也不需要像以前的提议那样用于写入的激光器。