Silicon-based digital electronics have evolved over decades through an aggressive scaling process following Moore’s law with increasingly complex device structures. Simultaneously, large-area electronics have continued to rely on the same field-effect transistor structure with minimal evolution. This limitation has resulted in less than ideal circuit designs, with increased complexity to account for shortcomings in material properties and process control. At present, this situation is holding back the development of novel systems required for printed and flexible electronic applications beyond the Internet of Things. In this work we demonstrate the opportunity offered by the source-gated transistor’s unique properties for low-cost, highly functional large-area applications in two extremely compact circuit blocks. Polysilicon common-source amplifiers show 49 dB gain, the highest reported for a two-transistor unipolar circuit. Current mirrors fabricated in polysilicon and InGaZnO have, in addition to excellent current copying performance, the ability to control the temperature dependence (degrees of positive, neutral or negative) of output current solely by choice of relative transistor geometry, giving further flexibility to the design engineer. Application examples are proposed, including local amplification of sensor output for improved signal integrity, as well as temperature-regulated delay stages and timing circuits for homeostatic operation in future wearables. Numerous applications will benefit from these highly competitive compact circuit designs with robust performance, improved energy efficiency and tolerance to geometrical variations: sensor front-ends, temperature sensors, pixel drivers, bias analog blocks and high-gain amplifiers.

中文翻译：

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用于无处不在的传感器的紧凑型源门控晶体管模拟电路

几十年来，硅基数字电子产品通过遵循摩尔定律的积极缩放过程不断发展，设备结构越来越复杂。同时，大面积电子产品继续依赖于相同的场效应晶体管结构，并且进化最少。这种限制导致了不太理想的电路设计，增加了复杂性以解决材料特性和过程控制方面的缺陷。目前，这种情况阻碍了物联网以外印刷和灵活电子应用所需的新型系统的开发。在这项工作中，我们展示了源栅晶体管的独特特性为低成本、高性能大面积应用提供的机会，这些应用位于两个极其紧凑的电路块中。多晶硅共源放大器显示 49 dB 增益，这是双晶体管单极电路报告的最高增益。用多晶硅和 InGaZnO 制造的电流镜除了具有出色的电流复制性能外，还能够仅通过选择相关的晶体管几何形状来控制输出电流的温度依赖性（正、中性或负的度数），从而为设计提供更大的灵活性工程师。提出了应用示例，包括传感器输出的本地放大以提高信号完整性，以及用于未来可穿戴设备中稳态操作的温度调节延迟级和定时电路。许多应用将受益于这些极具竞争力的紧凑型电路设计，这些设计具有强大的性能、更高的能效和对几何变化的容忍度：