Diamond is a promising electronic semiconductor candidate that has recently attracted intense interest in the implementation of its superior physical properties in electronic devices. In particular, attention has been focused on the surface transfer doping of diamond, in which the hydrogen-terminated diamond (diamond:H) benefices of a unique conductive two-dimensional hole gas (2DHG) layer at the diamond's sub-surface upon coverage with a suitable surface acceptor. Several diamond:H transistors have been developed. However, their inherent architecture dependence on the diamond:H conductive surface sensitivity to harsh processing environments has been a major barrier to the realization of high-performance devices. Here, we report on a diamond:H transistor structure that incorporates a mutual diamond:H active channel into the hybrid model of a metal-semiconductor field-effect transistor (MESFET) and a self-aligned metal-insulator-semiconductor FET (MISFET) with a common gate connection. The resulting diamond:H hybrid transistor exhibits a beneficial symbiosis that includes the advantages of both the MISFET (a high ON current of 0.8 μA/μm and a low OFF current of ∼10−9 μA/μm) and MESFET (almost an ideal subthreshold swing of 67 mV/dec) performance operations in the same multilayered device.

中文翻译：

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用于改进的基于金刚石的晶体管的混合自对准 MIS-MESFET 架构

金刚石是一种很有前途的电子半导体候选者，最近在电子设备中实现其优越的物理特性引起了浓厚的兴趣。特别是，注意力集中在金刚石的表面转移掺杂上，其中氢封端的金刚石（金刚石：H）在金刚石亚表面的独特导电二维空穴气体（2DHG）层被合适的表面受体。已经开发了几种金刚石：H 晶体管。然而，它们对金刚石的固有架构依赖：H 导电表面对恶劣加工环境的敏感性一直是实现高性能设备的主要障碍。在这里，我们报告了一个包含相互钻石的钻石：H 晶体管结构：H 有源通道进入金属-半导体场效应晶体管 (MESFET) 和具有公共栅极连接的自对准金属-绝缘体-半导体 FET (MISFET) 的混合模型。由此产生的金刚石：H 混合晶体管表现出有益的共生关系，包括 MISFET（0.8 μA/μm 的高导通电流和 ~10-9 μA/μm 的低截止电流）和 MESFET（几乎是理想的亚阈值）的优点67 mV/dec) 性能操作在同一多层器件中。