Ferroelectric Si-doped HfO2 is a promising candidate for future generation memory devices. However, such devices are vulnerable to significant threshold voltage shifts resulting from charge trapping in oxide defects. We use complementary characterization and modeling techniques to reveal significant electron trapping/de-trapping behavior, together with a strong temperature dependence of the electron emission kinetics in ferroelectric layers, which results from the onset of polarization of the ferroelectric layer. This can lead to an apparent difference in the defect characteristics in ferroelectric-HfO2 compared to the paraelectric-HfO2 structures they are shown to closely resemble when this contribution is decoupled. The results demonstrate the presence of a defect band closely aligned to the silicon conduction band, which can easily be accessed during device operation.

中文翻译：

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FEFET Si:HfO2 层中的缺陷分析

铁电 Si 掺杂的 HfO2 是下一代存储设备的有希望的候选者。然而，这种器件容易受到由氧化物缺陷中的电荷俘获引起的显着阈值电压偏移的影响。我们使用互补表征和建模技术来揭示显着的电子俘获/去俘获行为，以及铁电层中电子发射动力学的强烈温度依赖性，这是由于铁电层极化的开始。这可能导致铁电 HfO2 的缺陷特性与顺电 HfO2 结构相比存在明显差异，当这种贡献被解耦时，它们显示出非常相似。结果表明存在与硅导带紧密对齐的缺陷带，