Abstract In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductancevoltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height ( Φb) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

中文翻译：

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CuO/n-Si 触点与 Cu/n-Si 触点电性能的比较

摘要 在这项研究中，CuO/n-Si/Al 异质结触点是通过热蒸发技术制造的。在室温下通过电流-电压 (IV)、电容-电压/频率 (CV/f) 和电导电压 (G/V) 测量来研究样品的电气特性。此外，还制作了 Cu/n-Si/Al 肖特基触点作为参考样品，以研究样品的电性能。根据正向偏置电流-电压 (IV) 和反向偏置电容-电压 (CV) 特性计算样品的理想因子 (n)、势垒高度 (Φb) 和串联电阻 (Rs) 的值。此外，为了检查结果的一致性，使用了 Cheung 和 Norde 函数。CuO/n-Si 接触的实验结果值与参考 Cu/n-Si 肖特基二极管的值进行了比较。观察到CuO/n-Si异质结的理想因子和势垒高度值高于Cu/n-Si肖特基接触，而串联电阻较低。此外，已经观察到电容值随着频率的增加而降低，并且在达到某个频率值之后几乎是恒定的。CuO/n-Si/Al异质结的理想因子约为2.40，因此与理想行为并不接近。