Multilevel Memristive GeTe Devices,Physica Status Solidi-Rapid Research Letters

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Multilevel Memristive GeTe Devices
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-11-20 , DOI: 10.1002/pssr.202000475
Alin Velea ₁ , Viorel Dumitru _{1,

2} , Florinel Sava ₁ , Aurelian-Catalin Galca ₁ , Claudia Mihai ₁

Affiliation

Phase‐change memories have reached an advanced degree of maturity, although, to be able to meet the increasing storage demand, multilevel capability is needed. A GeTe memristor is obtained in an amorphous state and it is subjected to a specific thermal treatment which initiates the transition toward the crystalline state. It is found that this crystalline state initialization process is highly beneficial for subsequently obtaining a large number of intermediate resistive states between the high and low resistive states. Multiple resistance levels are achieved by operating the devices in both DC sweeps and rectangular pulse modes in the low‐voltage subthreshold regime. The conduction is modeled using a space charge limited conduction model, showing three distinct conduction regions in the high resistive state which merge toward a single conduction region as the low resistive state is approached. The obtained memristors can be used as multilevel nonvolatile memories or as synapses in neuromorphic computing.

中文翻译：

多级忆阻GeTe器件

相变存储器已经达到了成熟的高级程度，尽管为了满足不断增长的存储需求，仍需要多级功能。获得了处于非晶态的GeTe忆阻器，并对其进行了特定的热处理，该热处理引发了向结晶态的转变。已经发现，该晶体状态初始化过程对于随后获得高电阻状态和低电阻状态之间的大量中间电阻状态非常有益。通过在低压亚阈值状态下在直流扫描和矩形脉冲模式下运行设备，可以实现多个电阻级别。使用空间电荷受限传导模型对传导进行建模，示出了处于高电阻状态的三个不同的导电区域，当接近低电阻状态时，三个导电区域向单个导电区域合并。所获得的忆阻器可以用作多级非易失性存储器，也可以用作神经形态计算中的突触。

更新日期：2020-11-20

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