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Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities
Advanced Materials Technologies ( IF 6.4 ) Pub Date : 2020-11-20 , DOI: 10.1002/admt.202000810
Ying Lu 1, 2, 3 , Shuang Gao 1, 2 , Fali Li 1, 2, 3 , Youlin Zhou 1, 2 , Zhuolin Xie 1, 2, 3 , Huali Yang 1, 2 , Wuhong Xue 1, 2 , Benlin Hu 1, 2 , Xiaojian Zhu 1, 2 , Jie Shang 1, 2 , Yiwei Liu 1, 2 , Run‐Wei Li 1, 2
Affiliation  

High‐performance stretchable and twistable nonvolatile memory devices with logic‐in‐memory functionality are highly desired for the development of future wearable electronics such as smart clothing. However, it is challenging to fabricate these memory devices using rigid functional materials based on conventional film deposition and patterning techniques. Herein, the first intrinsically stretchable and twistable resistive switching memory is reported using spin‐coated poly(dimethyl siloxane) elastomer as the storage medium and printed liquid metal as the electrodes. The memory device is found to exhibit a reliable resistive switching behavior under up to 30% stretching strain and 90° torsional deformation, possessing a large memory window (≈102) and an excellent retention (>104 s). Under 30% strain, stretching–release endurance of >500 cycles as well as excellent data integrity during the dynamic stretching–release process is demonstrated. Beyond data storage, logic‐in‐memory computation prototype represented by a one‐bit full adder is successfully implemented within four operation steps based on three stretched memory cells. This work will be highly valuable in materials and structure design towards the development of high‐performance and multifunctional wearable electronic modules and systems.

中文翻译:

具有信息存储和计算功能的可伸缩和可扭转的电阻式切换存储器

具有逻辑内存功能的高性能可拉伸和可扭曲非易失性存储设备对于开发诸如智能服装之类的未来可穿戴电子产品是非常需要的。但是,使用基于常规膜沉积和图案化技术的刚性功能材料来制造这些存储器件是具有挑战性的。在此,首次报道了使用旋涂的聚(二甲基硅氧烷)弹性体作为存储介质并使用印刷液态金属作为电极的第一个固有可拉伸和可扭转的电阻式开关存储器。的存储器装置被发现表现出〜30%的拉伸应变和90下一个可靠的电阻切换行为°扭转变形,具有大的存储窗口(≈10 2)和优异的保持率(> 10 4s)。在30%的应变下,展示了超过500个循环的拉伸释放持久性以及动态拉伸释放过程中出色的数据完整性。除数据存储外,以一个位全加器为代表的逻辑内存计算原型还可以在基于三个扩展存储单元的四个操作步骤中成功实现。这项工作在材料和结构设计方面对开发高性能和多功能可穿戴电子模块和系统具有非常重要的价值。
更新日期:2021-01-05
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