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Fabrication and characterization of copper (II) oxide/iron (III) oxide thin film heterostructures for trace arsenic (III) removal in water
Thin Solid Films ( IF 2.1 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.tsf.2020.138440
Elizabeth C. Pastrana , Steveen J. Loarte , Carlos D. Gonzales-Lorenzo , Roxana Y.P. Alta , Hugo A. Alarcón

Abstract In this study, nano-heterostructures based on copper (II) oxide/iron (III) oxide (CuO/α-Fe2O3) thin films were fabricated by a dip-coating technique using aqueous solutions. The heterostructures were deposited on fluorine-doped tin oxide glass substrates varying the CuO film thickness. From a detailed characterization using Fourier transform-infrared and X-ray diffraction the formation of CuO (tenorite)/α-Fe2O3 (hematite) was demonstrated. Atomic force microscopy provided valuable information on the growth of α-Fe2O3 crystals in the heterostructure with a conical-shaped surface. Meanwhile, the field emission scanning electron microscopy cross-section images confirm the formation of well-defined CuO layers under the α-Fe2O3 layers. The optical band gap energies for the heterostructures obtained were estimated from the diffuse reflectance spectra and ranged from 1.41 to 1.51 eV. Photoluminescence analysis revealed an improved separation and faster transfer of photogenerated electrons and holes for the heterostructures. The removal arsenic from an aqueous solution was achieved through the direct adsorption for As(III) and visible light oxidation to As(V). An enhancement of removal efficiency of As(III) for the heterostructures fabricated compared to pristine oxides was obtained.

中文翻译:

用于去除水中痕量砷 (III) 的铜 (II) 氧化物/铁 (III) 氧化物薄膜异质结构的制备和表征

摘要 在本研究中,通过使用水溶液的浸涂技术制备了基于氧化铜 (II)/氧化铁 (III) (CuO/α-Fe2O3) 薄膜的纳米异质结构。异质结构沉积在氟掺杂的氧化锡玻璃基板上,改变 CuO 膜厚度。通过使用傅立叶变换红外和 X 射线衍射的详细表征,证明了 CuO(透长石)/α-Fe2O3(赤铁矿)的形成。原子力显微镜为具有锥形表面的异质结构中 α-Fe2O3 晶体的生长提供了有价值的信息。同时,场发射扫描电子显微镜横截面图像证实了在 α-Fe2O3 层下形成了明确的 CuO 层。获得的异质结构的光学带隙能量是根据漫反射光谱估计的,范围为 1.41 到 1.51 eV。光致发光分析揭示了异质结构的光生电子和空穴的分离改进和更快转移。从水溶液中去除砷是通过直接吸附 As(III) 和可见光氧化成 As(V) 实现的。与原始氧化物相比,所制造的异质结构的 As(III) 去除效率得到了提高。从水溶液中去除砷是通过直接吸附 As(III) 和可见光氧化成 As(V) 实现的。与原始氧化物相比,所制造的异质结构的 As(III) 去除效率得到了提高。从水溶液中去除砷是通过直接吸附 As(III) 和可见光氧化成 As(V) 实现的。与原始氧化物相比,所制造的异质结构的 As(III) 去除效率有所提高。
更新日期:2021-01-01
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