Abstract Impurity-related photovoltaic conversion efficiency of single-intermediate band solar cell based on ( I n , G a ) N / G a N QW embedded in the intrinsic region of conventional p-i-n structure is reported in the present paper. The width and position of ground-state intermediate band originated from electron and hole discrete quantized energy levels are calculated by solving impurity-related Schrodinger equation based on the finite difference method. Inter-subband and inter-band transitions are obtained for different structure sizes and indium concentrations. Considering the impurity and hole generally ignored in such study, open-circuit voltage, current density and photovoltaic efficiency are numerically calculated. Our results show that the structure mean size and composition can be adjusted to optimize the performance of solar cell. It is found that: (1) the efficiency decreases with respect to well size and chemical composition (2) Two different behaviors limited by a critical barrier size are obtained, and (3) the critical barrier size increases versus the well composition.

中文翻译：

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考虑重空穴影响的(In,Ga)N/GaN量子阱单中带太阳能电池的杂质相关光伏效率

摘要 本文报道了基于(I n , G a ) N / G a N QW嵌入常规pin结构本征区的单中带太阳能电池的杂质相关光伏转换效率。基于有限差分法求解与杂质相关的薛定谔方程，计算了源自电子和空穴离散量子化能级的基态中间带的宽度和位置。对于不同的结构尺寸和铟浓度，获得了子带间和带间跃迁。考虑到此类研究中普遍忽略的杂质和空穴，数值计算了开路电压、电流密度和光伏效率。我们的结果表明，可以调整结构平均尺寸和成分以优化太阳能电池的性能。