Abstract In this paper, the method of thin film preparation is pulsed laser deposition (PLD). ZnS:Co thin film was grown on sapphire and glass substrates at different temperatures (pressures) by PLD, and we studied a series of optical properties. It shows the crystal structure in XRD. The transmission spectral properties of the ZnS:Co film are very prominent. The transmittance of the film is over 90% between 800 and 6000 nm. The XRD results show the crystalline structure of the film on sapphire substrates and the amorphous structure of the film on glass, which is reflected in the guidance effect of the substrates. The high temperature environment is conducive to the formation of crystals. The best electrical properties of film with 600 °C proposed in the experiment. The research results play a key role in the application of ZnS:Co materials.

中文翻译：

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提高 Co 掺杂 ZnS 薄膜的晶体/光学质量和电性能的比较研究

摘要 在本文中，薄膜制备方法是脉冲激光沉积（PLD）。通过PLD在不同温度（压力）下在蓝宝石和玻璃基板上生长ZnS：Co薄膜，我们研究了一系列光学特性。它显示了 XRD 中的晶体结构。ZnS:Co 薄膜的透射光谱特性非常突出。薄膜在800-6000nm之间的透光率超过90%。XRD结果显示了蓝宝石衬底上薄膜的晶体结构和玻璃上薄膜的非晶结构，这体现在衬底的导向作用上。高温环境有利于晶体的形成。实验中提出了 600°C 薄膜的最佳电性能。研究成果对ZnS:Co材料的应用起到了关键作用。