当前位置: X-MOL 学术Mater. Lett. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A high performance self-powered heterojunction photodetector based on NiO nanosheets on an n-Si (100) modified substrate
Materials Letters ( IF 3 ) Pub Date : 2021-02-01 , DOI: 10.1016/j.matlet.2020.128995
Yongfang Zhang , Tao Ji , Jinqi Zhu , Rujia Zou , Junqing Hu

Abstract A self-powered ultraviolet-visible photodetector based on NiO/Si heterojunctions made from NiO nanosheets on a Si (100) modified substrate was successfully manufactured via a facile hydrothermal method and subsequent calcination process. The fabricated detectors not only response to ultraviolet (UV) and visible light, but also possess excellent photocurrents and a lower dark current. The good performance, i.e., the external quantum efficiency (EQE) of ∼ 22.4% and 33.1% under 350 nm and 600 nm, respectively, at zero bias, superior to most reported NiO/Si photodetectors, could be ascribed to the good crystalline NiO nanosheets and the suitable n-Si (100) substrate. Therefore, as-fabricated self-powered broadband detectors have a great potential application in wearable and portable devices.

中文翻译:

基于 n-Si (100) 改性衬底上的 NiO 纳米片的高性能自供电异质结光电探测器

摘要 通过简便的水热法和后续的煅烧工艺,成功地制造了一种基于 NiO/Si 异质结的自供电紫外-可见光电探测器,该异质结由 NiO 纳米片在 Si (100) 改性衬底上制成。所制造的探测器不仅对紫外线 (UV) 和可见光做出响应,而且还具有出色的光电流和较低的暗电流。良好的性能,即在 350 nm 和 600 nm 下在零偏压下的外量子效率(EQE)分别为~22.4% 和 33.1%,优于大多数报道的 NiO/Si 光电探测器,可归因于良好的结晶 NiO纳米片和合适的 n-Si (100) 衬底。因此,制造的自供电宽带探测器在可穿戴和便携式设备中具有巨大的潜在应用。
更新日期:2021-02-01
down
wechat
bug