Abstract We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS2 field effect transistors. Experimental results indicate that Al2O3 overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.

中文翻译：

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使用醇作为工艺氧化剂通过高 k 电介质的原子层沉积掺杂 MoS2

摘要 我们开发了基于氧化物薄膜原子层沉积 (ALD) 的过渡金属二硫属化物掺杂技术。在这项研究中，我们使用包括异丙醇 (IPA) 和乙醇在内的各种氧化剂沉积 ALD Al2O3 覆盖层，并研究了根据 ALD 工艺选择的氧化剂的掺杂效果。通过底栅 MoS2 场效应晶体管的性能变化来研究掺杂效应。实验结果表明，与乙醇相比，使用 IPA 作为 ALD 反应物沉积的 Al2O3 覆盖层会产生更有效的 n 型掺杂效果。此外，通过调制原子层沉积过程有效地控制了掺杂。