The relationship of free surface area with temperature, power, and oxygen concentration in a silicon ingot grown by Czochralski method for solar cells was investigated by simulating the growing process of 4-, 6-, and 8-inch diameter ingots with a 24-inch quartz crucible. It was confirmed that the temperature at auto-temperature-control (ATC) sensor of 4-inch diameter ingot was higher than 6- and 8-inch diameter ingot due to the longer distance between triple point and ATC sensor, i.e., larger area of the free surface. In addition, it was observed that the power consumption for growing 4-inch diameter ingot was greater than 6-and 8-inch diameter ingot because of its smaller heat capacity resulted from smaller charge size. In particular, it was confirmed that the oxygen concentration of 4-inch diameter ingot was lower than those of 6- and 8-inch diameter ingots since the larger free surface area and weaker melt convection led to the lower oxygen concentration in 4-inch ingot. This understanding of the relationship of free surface area with oxygen concentration in a silicon ingot can be applicable directly to control oxygen concentration in growing different diameter of silicon ingots.

通过模拟直径为4英寸，6英寸和8英寸，24英寸的硅锭的生长过程，研究了通过Czochralski方法生长的硅锭中自由表面积与温度，功率和氧浓度之间的关系。石英坩埚。可以肯定的是，由于三点距ATC传感器之间的距离较长，因此4英寸直径锭的自动温度控制（ATC）传感器的温度高于6英寸和8英寸直径锭的温度，即，更大面积的自由表面。另外，观察到生长4英寸直径的锭的功耗大于6英寸和8英寸直径的锭，这是因为由于较小的装料尺寸而导致其较小的热容量。特别是，确认了4英寸直径的铸锭的氧浓度比6英寸和8英寸直径的铸锭的氧浓度低，这是因为较大的自由表面积和较弱的熔体对流导致4英寸的铸锭的氧浓度较低。 。这种对自由表面积与硅锭中氧浓度的关系的理解可以直接应用于控制生长不同直径的硅锭中的氧浓度。