We successfully synthesized CuFeS₂ nanoparticles (NPs) using a simple synthesis method mediated by touch me not (Mimosa pudica) leaves extract. X-ray diffraction (XRD) was used to analyze the structural properties, and it shows that the CuFeS₂ NPs have a tetragonal structure and quasi-pyramidal NPs of an average crystallite size of 31.0 nm with a secondary phase of few minor peaks of covellite (CuS). The optical characterization showed that CuFeS2 NPs have band gap energy ranges of 1.98–2.46 eV for different annealing temperatures. The electrochemical properties of the CuFeS₂ NPs were investigated using cyclic voltammetry (CV), galvanostatic charge discharge (GCD), and electrochemical impedance spectroscopy (EIS). An appreciable value of specific capacitance of 501.4 F/g was obtained at a scan rate of 10 mV/s for the CuFeS₂ NPs annealed at 250 °C which can be said to be within the optimum ideal annealing temperature for CuFeS₂ NPs. The CuFeS₂ NPs was used in the photodegradation of methylene blue (MB) under of solar irradiation. The highest rate constant of 3.1 × 10⁻² min⁻¹ and degradation efficiency of 98% were obtained for the unannealed CuFeS₂ NPs with good stability after three cycles. Therefore, the synthesized CuFeS₂ NPs were obtained using a Mimosa pudica leaves extract prospective application in both electrochemical energy storage devices and treatment of water contaminants. GO was added to increase the active sites for these ions, surface area, and conductivity of these electrodes for enhanced supercapacitive performance.

我们成功地使用一种由触摸而不是（Mimosa pudica）叶提取物介导的简单合成方法成功合成了CuFeS ₂纳米颗粒（NPs）。用X射线衍射（XRD）分析了结构特性，结果表明CuFeS ₂ NP具有四方结构，准金字塔形NP的平均微晶尺寸为31.0 nm，次生相具有少量的共沸石次峰。 （CuS）。光学表征表明，对于不同的退火温度，CuFeS2 NPs的带隙能级范围为1.98–2.46 eV。CuFeS ₂的电化学性质使用循环伏安法（CV），恒电流电荷放电（GCD）和电化学阻抗谱（EIS）研究了NP。对于在250°C退火的CuFeS ₂ NP，在10 mV / s的扫描速率下获得的比电容值为501.4 F / g，这可以说是在CuFeS ₂ NP的最佳理想退火温度之内。CuFeS ₂ NP用于太阳光下的亚甲基蓝（MB）的光降解。对于未经退火的CuFeS ₂ NP，经过三个循环后具有良好的稳定性，其最高速率常数为3.1×10 ^-2  min ^-1，降解效率为98％。因此，合成的CuFeS ₂使用含羞草叶子提取物获得的NPs在电化学储能装置和水污染物的处理中都有前瞻性应用。添加GO可以增加这些离子的活性位，表面积和这些电极的电导率，从而增强了超电容性能。