An AgGaTe₂ layer was prepared using an Ag₂Te buffer layer. Ag₂Te layers were deposited by the radio-frequency sputtering method. We investigate the variations in the Ag₂Te buffer layer surface morphology and composition that take place during annealing. Ag₂Te films were annealed in a tube furnace. The composition and surface morphology of the Ag₂Te layer were found to vary depending on the thermal annealing temperature and duration. It was confirmed that a dewetting process in the Ag₂Te layer occurred with annealing between 200°C and 500°C, and O₂ and Mo reacted at 600°C and then became MoO₃ compounds. Mo and Te were completely desorbed from the surface at 700°C. This confirmed that the surface morphology of the Ag₂Te layer was controlled by the annealing temperature and duration.

使用Ag ₂ Te缓冲层制备AgGaTe ₂层。通过射频溅射法沉积Ag ₂ Te层。我们调查了在退火过程中发生的Ag ₂ Te缓冲层表面形态和组成的变化。Ag ₂ Te薄膜在管式炉中退火。发现Ag ₂ Te层的组成和表面形态根据热退火温度和持续时间而变化。确认了在200℃〜500℃之间的退火下，在Ag ₂ Te层中发生了脱湿处理，并且O ₂和Mo在600℃下反应而成为MoO _3。化合物。Mo和Te在700℃下从表面完全解吸。这证实了Ag ₂ Te层的表面形态受到退火温度和持续时间的控制。