In this study, the impacts of doping concentration on the crystal structure, morphology, electrical, and optical properties of Ho 3+ -doped zinc oxide (ZnO) nanorod (NR) arrays were studied. Structural and morphological characterizations showed that the Ho 3+ -doped ZnO NRs were crystallized in the (002) direction, and that they had a homogeneous distribution on the substrate. The crystallite sizes of the samples were between 50 nm and 65 nm. SEM analysis showed that every sample was hexagonal in shape. For the 1 and 5 mol.% Ho 3+ -doped ZnO NRs, the values for electrical conductivity were found to be 1.41 × 10 −7 and 8.29 × 10 −6 (Ω cm) −1 at 25°C and 1.70 × 10 −5 and 1.24 × 10 −3 (Ω cm) −1 at 300°C, respectively. The optical transmittances were between 80 and 93% for all the samples in the region from 400 to 1000 nm. The optical band gap values were determined to be between 3.180 and 3.195 eV.

中文翻译：

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良好排列的 Ho3+ 掺杂 ZnO 纳米棒作为替代透明导电氧化物的电学和光学性能

在本研究中，研究了掺杂浓度对 Ho 3+ 掺杂氧化锌 (ZnO) 纳米棒 (NR) 阵列的晶体结构、形态、电学和光学性质的影响。结构和形态表征表明，Ho 3+ 掺杂的 ZnO NRs 在 (002) 方向上结晶，并且它们在基板上具有均匀分布。样品的微晶尺寸在 50 nm 和 65 nm 之间。SEM分析表明每个样品的形状都是六边形。对于 1 和 5 mol.% Ho 3+ 掺杂的 ZnO NR，发现在 25°C 和 1.70 × 10 下的电导率值为 1.41 × 10 -7 和 8.29 × 10 -6 (Ω cm) -1 -5 和 1.24 × 10 -3 (Ω cm) -1 在 300°C 时分别为。在 400 至 1000 nm 范围内，所有样品的光学透射率都在 80% 至 93% 之间。