Abstract

The structural features induced by twinning in tin- and tellurium-doped gallium arsenide crystals during their growth by the Czochralski method with liquid melt sealing by boric anhydride have been considered. It is shown that growth twins and edge facets arise at the crystal periphery in the region of supercooled melt. The dopant concentration near a twin is always higher than in the region free of twins. A change is observed in the dislocation-growth direction in crystal during twinning.

中文翻译：

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Czochralski方法与砷化镓单晶生长中的孪生相关的结构特征

摘要

已经考虑了通过切克劳斯基方法和硼酸酐的液体熔体密封在锡和碲掺杂的砷化镓晶体生长过程中孪生引起的结构特征。结果表明，在过冷的熔体区域中，在晶体外围出现了生长孪晶和边缘晶面。双胞胎附近的掺杂剂浓度始终高于无双胞胎的区域。孪晶过程中，晶体的位错生长方向发生了变化。