Abstract

Epitaxial layers of GaN and InGaN/GaN multi-quantum well light emitting diodes (LEDs) were prepared both on cone-shaped patterned sapphire substrates and conventional sapphire substrates. The mechanism of nucleation of GaN epilayers was studied using metallographic and atomic force microscope images of the surface of GaN epilayers, and the internal factors of cone-shaped patterned sapphire substrates that accelerate GaN transverse growth and improve the quality of epitaxial layers were analyzed. The microstructural properties of GaN epitaxial layers grown on a patterned sapphire substrate were studied in detail using transmission electron microscopy to determine the distribution and growth. The surface morphology of p-GaN was characterized by scanning electron microscopy, and some other information about the defects was obtained. The full width at half maximum of electroluminescence spectra of LED grown on the patterned sapphire substrate is small, and its monochromaticity is good.

中文翻译：

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平面和锥型蓝宝石衬底上基于GaN的发光二极管的缺陷结构和演变

摘要

在锥形图案化的蓝宝石衬底和常规蓝宝石衬底上均制备了GaN外延层和InGaN / GaN多量子阱发光二极管（LED）。利用金相和原子力显微镜观察了GaN外延层表面的成核机理，分析了锥形图案化蓝宝石衬底加速GaN横向生长并提高外​​延层质量的内在因素。使用透射电子显微镜详细研究了在图案化蓝宝石衬底上生长的GaN外延层的微观结构特性，以确定分布和生长。p的表面形态通过扫描电子显微镜对-GaN进行了表征，并获得了有关缺陷的其他一些信息。在图案化的蓝宝石衬底上生长的LED的电致发光光谱的半峰全宽小，并且其单色性良好。