Abstract―

Based on Hall effect measurements it is shown that quenching of complexly doped Ge〈Zn,Сu〉 crystals at 1070–1100 K leads to the formation of additional electrically active donor centers with activation energy Е_d = Е_c – 93 meV in them. Further annealing of crystals at 550–570 K leads to disappearance of these centers. The most likely model of additional deep donor centers is a complex consisting of a pair of substituent zinc atoms (Zn_s) and interstitial copper atoms (Cu_i). The necessity of taking into account the formation of additional donor centers in precise doping Ge〈Zn〉 crystals with copper by the method of decomposition of supersaturated solution of impurity in matrix is demonstrated.

中文翻译：

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Ge晶体中Cu和Zn多受体杂质形成的供体配合物

摘要-

基于霍尔效应测量，示出了复杂的淬火掺杂的Ge <锌，Сu>在1070年至1100年ķ导致与活化能额外电活性供体中心形成的晶体Е _d = Е _Ç - 93兆电子伏在其中。晶体在550–570 K进一步退火会导致这些中心消失。额外的深施主中心最可能的模型是由一对取代锌原子（Zn _s）和间隙铜原子（Cu _i）组成的络合物。证明了通过分解基质中杂质的过饱和溶液的方法，必须考虑到在精确掺杂铜的Ge <Zn>晶体中形成额外的施主中心的必要性。