Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors
Nanoscale ( IF 5.8 ) Pub Date : 2020-11-16 , DOI: 10.1039/d0nr06872a Kai Xu 1, 2, 3, 4 , Wei Jiang 1, 4, 5, 6 , Xueshi Gao 1, 2, 3, 4 , Zijing Zhao 1, 2, 3, 4 , Tony Low 1, 4, 5, 6 , Wenjuan Zhu 1, 2, 3, 4
Nanoscale ( IF 5.8 ) Pub Date : 2020-11-16 , DOI: 10.1039/d0nr06872a Kai Xu 1, 2, 3, 4 , Wei Jiang 1, 4, 5, 6 , Xueshi Gao 1, 2, 3, 4 , Zijing Zhao 1, 2, 3, 4 , Tony Low 1, 4, 5, 6 , Wenjuan Zhu 1, 2, 3, 4
Affiliation
|
Indium Selenide (In2Se3) is a newly emerged van der Waals (vdW) ferroelectric material, which unlike traditional insulating ferroelectric materials, is a semiconductor with a bandgap of about 1.36 eV. Ferroelectric diodes and transistors based on In2Se3 have been demonstrated. However, the interplay between light and electric polarization in In2Se3 has not been explored. In this paper, we found that the polarization in In2Se3 can be programmed by optical stimuli, due to its semiconducting nature, where the photo generated carriers in In2Se3 can alter the screening field and lead to polarization reversal. Utilizing these unique properties of In2Se3, we demonstrated a new type of multifunctional device based on 2D heterostructures, which can concurrently serve as a logic gate, photodetector, electronic memory and photonic memory. This dual electrical and optical operation of the memories can simplify the device architecture and offer additional functionalities, such as ultrafast optical erase of large memory arrays. In addition, we show that dual-gate structure can address the partial switching problem commonly observed in In2Se3 ferroelectric transistors, as the two gates can enhance the vertical electric field and facilitate the polarization switching in the semiconducting In2Se3. These discovered effects are of general nature and should be observable in any ferroelectric semiconductor. These findings deepen the understanding of polarization switching and light-polarization interaction in semiconducting ferroelectric materials and open up their applications in multifunctional electronic and photonic devices.
中文翻译：
基于范德华铁电半导体的铁电开关和多功能设备的光学控制
硒化铟（In 2 Se 3）是一种新兴的范德华（vdW）铁电材料，与传统的绝缘铁电材料不同，它是带隙约为1.36 eV的半导体。已经证明了基于In 2 Se 3的铁电二极管和晶体管。然而，尚未研究In 2 Se 3中光与极化之间的相互作用。在本文中，我们发现In 2 Se 3中的极化可以通过光学刺激进行编程，这是由于其半导体性质，其中In 2 Se 3中的光生载流子会改变筛选场并导致极化反转。利用In 2 Se 3的这些独特特性，我们展示了一种基于2D异质结构的新型多功能器件，该器件可以同时用作逻辑门，光电探测器，电子存储器和光子存储器。存储器的这种双重电和光学操作可以简化设备架构，并提供其他功能，例如大型存储器阵列的超快速光学擦除。此外，我们表明双栅极结构可以解决In 2 Se 3中常见的部分开关问题铁电晶体管，因为这两个栅极可以增强垂直电场并促进半导体In 2 Se 3中的极化切换。这些发现的效应具有一般性质，在任何铁电半导体中都应观察到。这些发现加深了对半导体铁电材料中的偏振转换和光偏振相互作用的理解，并开拓了它们在多功能电子和光子器件中的应用。
更新日期：2020-11-19
中文翻译：
基于范德华铁电半导体的铁电开关和多功能设备的光学控制
硒化铟（In 2 Se 3）是一种新兴的范德华（vdW）铁电材料，与传统的绝缘铁电材料不同，它是带隙约为1.36 eV的半导体。已经证明了基于In 2 Se 3的铁电二极管和晶体管。然而，尚未研究In 2 Se 3中光与极化之间的相互作用。在本文中，我们发现In 2 Se 3中的极化可以通过光学刺激进行编程，这是由于其半导体性质，其中In 2 Se 3中的光生载流子会改变筛选场并导致极化反转。利用In 2 Se 3的这些独特特性，我们展示了一种基于2D异质结构的新型多功能器件，该器件可以同时用作逻辑门，光电探测器，电子存储器和光子存储器。存储器的这种双重电和光学操作可以简化设备架构，并提供其他功能，例如大型存储器阵列的超快速光学擦除。此外，我们表明双栅极结构可以解决In 2 Se 3中常见的部分开关问题铁电晶体管，因为这两个栅极可以增强垂直电场并促进半导体In 2 Se 3中的极化切换。这些发现的效应具有一般性质，在任何铁电半导体中都应观察到。这些发现加深了对半导体铁电材料中的偏振转换和光偏振相互作用的理解，并开拓了它们在多功能电子和光子器件中的应用。
京公网安备 11010802027423号