Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise for use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-µm-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 µm2, similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at ∼520 nm and a thermal redshift of 4 nm with ∼3.6 MWm−2 continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices.

中文翻译：

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从 InP 衬底悬浮和转移印刷 ZnCdMgSe 膜

与 InP 衬底晶格匹配的宽带隙 II-VI 半导体显示出可用于新型可见光波长光子器件的前景；然而，用于去除基材的释放层仍在开发中。报道了一种蚀刻不足方法，该方法使用 InP 衬底作为晶格匹配 ZnCdMgSe 膜的外延剥离的有效释放层。使用干法蚀刻在 ZnCdMgSe 表面上定义了一个 100 µm 平方的膜阵列，并使用三步湿法蚀刻从 InP 衬底上悬挂下来。ZnCdMgSe 膜被转移印刷到金刚石散热器上，并且在 400 µm2 上具有 < 2 nm 的 RMS 表面粗糙度，类似于外延表面。金刚石上的膜在~520 nm 处显示出光致发光峰，在 447 nm 处显示出~3.6 MWm-2 连续光泵浦的 4 nm 热红移。没有裂纹或可见的膜弯曲证明了该过程中有效的应变管理，并且高亮度光致发光表明引入了最小的非辐射缺陷。所提出的方法将使 II-VI 膜装置的异质集成和小型化成为可能。