Solution-processable, single-crystalline perovskite nanowires are ideal candidates for developing low-cost photodetectors, but their detectivities are limited due to a high level of unintentional defects. Through the surface-initiated solution-growth method, we fabricated high-quality, single-crystalline, defects-suppressed MAPbI3 nanowires, which possess atomically smooth side surfaces with a surface roughness of 0.27 nm, corresponding to a carrier lifetime of 112.9 ns. By forming ohmic MAPbI3/Au contacts through the dry contact method, high-performance metal–semiconductor–metal photodetectors have been demonstrated with a record large linear dynamic range of 157 dB along with a record high detectivity of 1.2×1014 Jones at an illumination power density of 5.5 nW/cm2. Such superior photodetector performance metrics are attributed to, first, the defects-suppressed property of the as-grown MAPbI3 nanowires, which leads to a quite low noise current in the dark, and second, the ohmic contact between MAPbI3 and Au interfaces, which gives rise to an improved responsivity compared with the Schottky contact counterpart. The realized high-performance MAPbI3 nanowire photodetector advances the development of low-cost photodetectors and has potential applications in weak-signal photodetection.

中文翻译：

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基于具有抑制表面缺陷的钙钛矿纳米线的高探测率光电探测器

可溶液加工的单晶钙钛矿纳米线是开发低成本光电探测器的理想候选者，但由于存在大量非故意缺陷，其探测能力受到限制。通过表面引发的溶液生长方法，我们制造了高质量、单晶、缺陷抑制的 MAPbI3 纳米线，其具有原子级光滑的侧面，表面粗糙度为 0.27 nm，对应的载流子寿命为 112.9 ns。通过干接触法形成欧姆 MAPbI3/Au 触点，高性能金属-半导体-金属光电探测器已被证明具有创纪录的 157 dB 大线性动态范围以及在照明功率下创纪录的 1.2×1014 Jones 检测率密度为 5.5 nW/cm2。这种卓越的光电探测器性能指标归因于，首先，生长的 MAPbI3 纳米线的缺陷抑制特性，这导致在黑暗中非常低的噪声电流，其次，MAPbI3 和 Au 界面之间的欧姆接触，与肖特基接触对应物相比，提高了响应率. 实现的高性能 MAPbI3 纳米线光电探测器推动了低成本光电探测器的发展，并在弱信号光电探测中具有潜在应用。