To improve power efficiency and endurance of magnetic memory technologies, a voltage-controlled mechanism is desirable. The voltage control of magnetic anisotropy (VCMA) effect in MgO stacks is a promising option, however, its strength is too low for memory applications. Replacing the standard MgO layer by an oxide with a higher permittivity $\kappa$ may help improve the VCMA strength. We demonstrate a VCMA effect up to $\xi =75$ fJ/Vm at room temperature in a Co∖Pt bilayer grown on atomic layer deposited (ALD) high-$\kappa {\mathrm{SrTiO}}_3$ (STO). After treating the STO surface with isopropanol, a thin ${\mathrm{CoO}}_x$ interfacial layer is observed, enabling VCMA. Upon cooling down from room temperature to 200 K, the VCMA effect strength increases by a factor of two. This increase is incompatible with the expected Arrhenius temperature dependence for an ionic effect and thus we argue that the observed VCMA effect is electronic. Electronic VCMA is desirable for adequate memory endurance, and hence the approach proposed here has great potential for applications.

中文翻译：

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高κSrTiO3/ Co / Pt三层中室温磁各向异性的电子电压控制

为了提高功率效率和磁存储技术的耐久性，需要一种电压控制机制。MgO堆栈中的磁各向异性（VCMA）效应的电压控制是一个有前途的选择，但是，其强度对于存储应用而言太低了。用介电常数高的氧化物代替标准MgO层$\kappa$可能有助于提高VCMA强度。我们展示了VCMA效果$\xi =75$ 在室温下在生长于原子层沉积（ALD）的Co∖Pt双层中的fJ / Vm$\kappa {\mathrm{钛酸锶}}_3$（STO）。用异丙醇处理STO表面后，${\mathrm{首席运营官}}_X$观察到界面层，从而启用VCMA。从室温冷却到200 K后，VCMA效果强度增加了两倍。这种增加与离子效应的预期Arrhenius温度依赖性不兼容，因此我们认为观察到的VCMA效应是电子的。电子VCMA对于保持足够的内存耐久性是理想的，因此，本文提出的方法具有很大的应用潜力。