Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application,ACS Applied Electronic Materials

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Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-11-19 , DOI: 10.1021/acsaelm.0c00817
Venkata K. Perla ₁ , Sarit K. Ghosh ₁ , Kaushik Mallick ₁

Affiliation

A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on–off ratio of ∼10³. The endurance and data retention studies were conducted for 10³ cycles and 10³ s, respectively, and the device revealed excellent stability with a constant on–off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.

中文翻译：

氮化碳支持的超细硫化锰基非易失性电阻开关器件，用于半字节存储应用

高温原位途径已被用于合成氮化碳负载的硫化锰纳米颗粒（CNMS）。使用不同的分析技术对杂化材料进行了表征。基于CNMS的设备的电学性能证明了其具有非对称S型双极特性的电阻切换行为。该器件分别在+2.7 V和-3.5 V下显示SET和RESET过程，开/关比约为10 ³。进行了10 ³个周期和10 ³个周期的耐力和数据保留研究s，并且该器件在恒定的开关比下显示出出色的稳定性。在这项研究中，我们还演示了一种由CNMS制成的，大小为半字节的设备，已成功处理，存储和恢复了二进制形式的信息。

更新日期：2020-12-22

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