The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3 × 10−16 counts•pulse/photon2, 4.3 × 10−15 counts•pulse/photon2, respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9 × 10−16 counts•pulse/photon2. This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.

中文翻译：

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用于红外光子探测的硅雪崩光电二极管中简并和非简并双光子吸收响应贡献的测定

研究半导体光电器件中的非线性相互作用以实现有效和快速的光子识别是一项持续且重要的任务。我们研究了硅雪崩光电二极管 (Si-APD) 中简并和非简并双光子吸收（D-TPA 和 ND-TPA）响应对室温下红外光子检测的具体贡献。我们通过实验证明，当两个激光脉冲重叠时，在 1800 nm 和 1550 nm 处测得的平均 D-TPA 量子检测效率为 3.3 × 10−16 counts•pulse/photon2, 4.3 × 10−15 counts•pulse /光子2，分别。1800 nm 和 1550 nm 的 ND-TPA 量子检测效率测得为 7.9 × 10−16 counts•pulse/photon2。