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Wake‐Up Effect in HfO2‐Based Ferroelectric Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-11-18 , DOI: 10.1002/aelm.202000728 Pengfei Jiang 1 , Qing Luo 1 , Xiaoxin Xu 1 , Tiancheng Gong 1 , Peng Yuan 1 , Yuan Wang 1 , Zhaomeng Gao 1 , Wei Wei 1 , Lu Tai 1 , Hangbing Lv 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-11-18 , DOI: 10.1002/aelm.202000728 Pengfei Jiang 1 , Qing Luo 1 , Xiaoxin Xu 1 , Tiancheng Gong 1 , Peng Yuan 1 , Yuan Wang 1 , Zhaomeng Gao 1 , Wei Wei 1 , Lu Tai 1 , Hangbing Lv 1
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HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been confirmed that various dopants can induce ferroelectricity in HfO2‐based films, and the “wake‐up” effect in HfO2 films with different dopants deposited by different processes has been studied extensively. Recent developments in the wake‐up effect of doped HfO2‐based films are presented. Aside from the differences between the various ferroelectric materials and their deposition methods, the electrodes used in a ferroelectric capacitor, which determine the nature of the interface between the electrode and the ferroelectric layer, can strongly influence the characteristics of the wake‐up effect. The rate of variation of the remanent polarization shows certain trends with different dopants. Based on the wake‐up mechanisms, many methods to optimize and control this effect are presented in this letter. Until now, the reported mechanism explanations of the wake‐up effect all aimed at one type of specific dopant or deposition technique, but can't systematically interpret why the root causes might be different with different dopants and deposition processes. There is also a lack of in‐depth research on the effects of interfacial layer with respect to different electrode material.
中文翻译：
基于HfO2的铁电薄膜的唤醒效应
基于HfO 2的铁电材料有望成为下一代非易失性存储器的候选材料。自2011年首次发表关于掺Si的HfO 2铁电薄膜的报告以来，已证实各种掺杂剂可在基于HfO 2的薄膜中感应铁电，并且通过沉积不同的掺杂剂在HfO 2薄膜中产生“唤醒”效应。已经广泛研究了不同的过程。掺杂HfO 2唤醒效应的最新进展放映基于电影的影片。除了各种铁电材料及其沉积方法之间的差异外，铁电电容器中使用的电极还决定了电极与铁电层之间界面的性质，这会极大地影响唤醒效果的特性。剩余极化的变化率显示出不同掺杂剂的某些趋势。基于唤醒机制，本文介绍了许多优化和控制此效果的方法。直到现在，所报道的唤醒效应的机理解释都针对一种特定的掺杂剂或沉积技术，但无法系统地解释为什么根本原因可能因不同的掺杂剂和沉积过程而不同。
更新日期：2021-01-14
中文翻译：
基于HfO2的铁电薄膜的唤醒效应
基于HfO 2的铁电材料有望成为下一代非易失性存储器的候选材料。自2011年首次发表关于掺Si的HfO 2铁电薄膜的报告以来，已证实各种掺杂剂可在基于HfO 2的薄膜中感应铁电，并且通过沉积不同的掺杂剂在HfO 2薄膜中产生“唤醒”效应。已经广泛研究了不同的过程。掺杂HfO 2唤醒效应的最新进展放映基于电影的影片。除了各种铁电材料及其沉积方法之间的差异外，铁电电容器中使用的电极还决定了电极与铁电层之间界面的性质，这会极大地影响唤醒效果的特性。剩余极化的变化率显示出不同掺杂剂的某些趋势。基于唤醒机制，本文介绍了许多优化和控制此效果的方法。直到现在，所报道的唤醒效应的机理解释都针对一种特定的掺杂剂或沉积技术，但无法系统地解释为什么根本原因可能因不同的掺杂剂和沉积过程而不同。
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