Nowadays, carbon–based materials like graphene and its derivatives consume great nano-technological applications worldwide. Graphene, due to its attractive properties such as its unusual charge transport, mechanical and thermal capabilities, is in the nano-scaling research spotlight. Additionally, to overcome the scaling limitations of large-scale charge-storage-based memories, the Memristor is focused upon as a nonvolatile memory. In the present work, the modeling of a Memristor based on graphene oxide as an active layer is considered. The drift-diffusion formalism as an electron transport mechanism, derived from ion immigration, is explored. It is concluded that by increasing the voltage between two metalelectrodes, the carrier concentration is increased, and the carrier mobility on the sandwiched layer (graphene oxide) is decreased. The conductive path by the redox of graphene oxide (GO) atoms, due to the conversion of sp³ to sp² oxygen functionalities, is formed, which can be modeled by degenerate mode (the low resistance switching or ON state). This path is ruptured by decreasing the voltage into the reset voltage, which is modeled by the non-degenerate mode (the high resistance switching or OFF state). Finally, the model in comparison with the experimental data numerically is simulated, and acceptable results for metal and graphene–like path formation are observed.

如今，石墨烯及其衍生物等碳基材料在全球范围内消耗大量纳米技术应用。石墨烯由于其吸引人的特性，例如其不寻常的电荷传输、机械和热能力，成为纳米尺度研究的焦点。此外，为了克服基于大规模电荷存储的存储器的缩放限制，忆阻器被专注于作为非易失性存储器。在目前的工作中，考虑了基于氧化石墨烯作为活性层的忆阻器的建模。探索了作为电子传输机制的漂移扩散形式，源自离子迁移。结论是通过增加两个金属电极之间的电压，载流子浓度增加，夹层（氧化石墨烯）上的载流子迁移率降低。^{形成了 3}到 sp ²氧官能团，其可以通过简并模式（低电阻开关或导通状态）建模。该路径通过将电压降低到复位电压而被破坏，复位电压由非退化模式（高阻开关或关断状态）建模。最后，将模型与实验数据进行数值比较，并观察到金属和石墨烯类路径形成的可接受结果。