Abstract We report on the correlated investigation between crystal structures, field-induced phase transition, and energy storage properties of both polycrystalline and epitaxial antiferroelectric PbZrO3 (PZO) films grown by pulsed laser deposition on Si and SrTiO3 substrates. The structural characterization revealed the polycrystalline structure of the PZO films on Pt/Si and the epitaxial relationship between the films and the SrTiO3/Si and SrTiO3 substrates. Different to normal ferroelectric fi lms, the polycrystalline PZO films show similar polarization loops but with a higher maximum polarization, resulting in a larger energy storage density under the same conditions. Due to the larger electric breakdown strength (2800 kV/cm), however, the epitaxial PZO films grown on SrTiO3/Si have a higher recoverable energy storage density (24.9 J/cm3) than those on Pt/Si (23.4 J/cm3 at 2500 kV/cm) and on SrTiO3 (22.0 J/cm3 at 2550 kV/cm). Additionally, the introduction of SrRuO3 oxide-electrode improves the endurance performance of energy storage properties of the films on STO/Si by suppressing the formation of the dead layer between the film and the electrode. In this way, applications based on PZO films would be more easily integrated on Si and open the way to develop high-power commercial energy storage systems.

中文翻译：

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衬底和电极对反铁电PbZrO3薄膜晶体结构和储能性能的影响

摘要 我们报告了通过脉冲激光沉积在 Si 和 SrTiO3 衬底上生长的多晶和外延反铁电 PbZrO3 (PZO) 薄膜的晶体结构、场致相变和能量存储特性之间的相关研究。结构表征揭示了 Pt/Si 上 PZO 薄膜的多晶结构以及薄膜与 SrTiO3/Si 和 SrTiO3 衬底之间的外延关系。与普通铁电薄膜不同，多晶 PZO 薄膜表现出相似的极化回路，但具有更高的最大极化，从而在相同条件下产生更大的能量存储密度。然而，由于较大的电击穿强度（2800 kV/cm），在 SrTiO3/Si 上生长的外延 PZO 薄膜具有更高的可恢复储能密度（24. 9 J/cm3）比 Pt/Si（2500 kV/cm 时为 23.4 J/cm3）和 SrTiO3（2550 kV/cm 时为 22.0 J/cm3）。此外，SrRuO3 氧化物电极的引入通过抑制薄膜和电极之间死层的形成，提高了 STO/Si 上薄膜的储能性能的持久性能。这样，基于 PZO 薄膜的应用将更容易集成到 Si 上，并为开发大功率商业储能系统开辟道路。