Abstract Surface sulfurization is an effective way for CIGSe thin film to implement front graded bandgap. The controllable high S content with shallow diffusion depth into the film is key for the sulfurization. However, the degree of the sulfurization is closely related to the reaction temperature, thus it is difficult to control the diffusion depth of S into the CIGSe thin film effectively with high S content in such shallow depth. In this study, a pulsed sulfurization process is employed to realize a surface sulfurization as well as a high S content in a shallow diffusion depth of S into CIGSe at low substrate temperature, which provides an important way to fabricate double graded bandgap films prepared by post-selenization process. Structural analysis confirms the feasibility of the pulsed rapid thermal processing sulfurization. The device with surface sulfurization has the EA of N1 defects shifted to shallow position from 54 meV to 143 meV down to about 26 meV and 110 meV, respectively. The Voc, FF, and Jsc are improved obviously. Finally, the efficiency of CIGSSe thin film solar cell, based on the electrodeposition and selenization, increases by 20% with the improvement of Voc and FF.

中文翻译：

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用于在低温下定制 CIGSe 薄膜表面硫化的脉冲快速热处理

摘要 表面硫化是CIGSe薄膜实现前级带隙的有效途径。可控的高 S 含量和浅扩散到薄膜中是硫化的关键。然而，硫化程度与反应温度密切相关，因此难以有效控制S向CIGSe薄膜中的扩散深度，在如此浅的深度具有高的S含量。本研究采用脉冲硫化工艺在低衬底温度下实现表面硫化以及在 S 向 CIGSe 的浅扩散深度中实现高 S 含量，这为制备后处理制备的双梯度带隙薄膜提供了重要途径。 - 硒化过程。结构分析证实了脉冲快速热处理硫化的可行性。具有表面硫化的器件的 N1 缺陷的 EA 分别从 54 meV 转移到 143 meV 到约 26 meV 和 110 meV。Voc、FF、Jsc都有明显提升。最后，基于电沉积和硒化的 CIGSSe 薄膜太阳能电池的效率随着 Voc 和 FF 的提高而提高了 20%。