The transport as well as accumulation of tungsten (W) impurity is one of the critical issues for the W divertor operation. The EAST tokamak with W and graphite divertor targets, provides a good platform for the investigation of W impurity behaviors. In this work, the production, transport and accumulation of W impurities are simulated via the SOLPS-DIVIMP modeling. The plasma background is obtained by the SOLPS simulations, while the W sputtering yield is calculated via empirical formula, and the following W transport is traced using the DIVIMP code. The W impurity source is mainly contributed by the incidence of carbon (C) impurity in this simulation. The distribution of W ions with different charge states is obtained and the transport of the W ions is analyzed by the net forces. The dependences of W impurity on the $n_{e,sep}^{\mathit{OMP}}$ and P_SOL are illustrated, which show the divertor plasma has great impact on the W impurity distribution. The increase of $n_{e,sep}^{\mathit{OMP}}$ can suppress the W impurity in the core region with the fixed P_SOL, while higher input power can enhance the W concentration significantly. The W impurity can lead to sufficient power radiation due to strong impurity source and high radiation rate in the core region during low density discharge, while the influence becomes weaker as $n_{e,sep}^{\mathit{OMP}}$ raises. The effects of self-sputtering on the W impurity accumulation are also discussed. With the increment of P_SOL, the sputtering and self-sputtering of W increase remarkably, leading to the W ions concentration exceed 10⁻⁵ in the core–edge interface (CEI). Moreover, the strong correlation between T_e at the outer target and W ion density at CEI is observed, showing that T_e < 20 eV is required to maintain W concentration at CEI below the acceptable limitation (10⁻⁵) in steady-state scenarios in EAST (without ELMs).

钨杂质的运输以及积累是钨分流器运行的关键问题之一。具有W和石墨偏滤器靶的EAST托卡马克，为研究W杂质行为提供了一个很好的平台。在这项工作中，通过SOLPS-DIVIMP模型模拟了W杂质的产生，运输和积累。通过SOLPS模拟获得等离子体背景，同时通过经验公式计算W溅射产率，并使用DIVIMP代码追踪随后的W传输。在此模拟中，W杂质源主要是由碳（C）杂质的产生引起的。获得了具有不同电荷状态的W离子的分布，并通过净力分析了W离子的传输。钨杂质对硅的影响${ñ}_{Ë，sËp}^{\mathit{OMP}}$示出了P _SOL和P _SOL，其表明偏滤器等离子体对W杂质分布具有很大的影响。增加${ñ}_{Ë，sËp}^{\mathit{OMP}}$固定P _SOL可以抑制核心区域中的W杂质，而更高的输入功率可以显着提高W浓度。在低密度放电期间，由于强杂质源和核心区域的高辐射率，W杂质可导致足够的功率辐射，而随着${ñ}_{Ë，sËp}^{\mathit{OMP}}$加薪。还讨论了自溅射对W杂质积累的影响。随着P _SOL的增加，W的溅射和自溅射显着增加，导致芯边缘界面（CEI）中的W离子浓度超过10 ^-5。此外，观察到外部目标处的T _e与CEI处的W离子密度之间有很强的相关性，表明在稳态情况下，要使 CEI处的W浓度保持在可接受的限制（10 ^-5）以下，需要T _e <20 eV在EAST中（没有ELM）。