Abstract Strong demand has been raised for the lightweight, wearable and flexible electronic devices such as wearable computers, paper-like E-readers and epidermal electronics. By using MWNTs-PhBr as a key one dimensional template, novel MWNTs (multi-walled carbon nanotubes) covalently functionalized with poly[(1,4-diethynyl- benzene)-alt-9,9-bis-(4-diphenylaminophenyl)fluorene] (PDDF-g-MWNTs), in which the weight percentage of MWNTs is about 22.74, were successfully synthesized. The as-prepared flexible electronic device with a configuration of Al/PDDF-g-MWNTs/ITO-coated polydimethylsiloxane shows typical nonvolatile rewritable memory performance, with a higher ON/OFF current ratio of more than 104, a switch-on voltage of +2.07 V and a switch-off voltage of -2.45V. With increasing the film thicknesses, the ON/OFF current ratio of the device was changed from 1× 104 (80 nm) to 2 × 104 (100 nm) to 4 × 104 (130 nm). Both the switch-on and switch-off voltages almost kept unchanged even if the film thickness was increased from 80 to 130 nm. Upon bending and stretching, the corresponding electronic device still shows good stability and reliability. Electrons dominate the conduct process in PDDF-g-MWNTs during the operation of the device.

中文翻译：

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用于柔性非易失性 RRAM 器件的共轭聚合物共价改性多壁碳纳米管

摘要 可穿戴电脑、纸质电子阅读器、表皮电子等轻量化、可穿戴、柔性电子设备需求旺盛。通过使用 MWNTs-PhBr 作为关键的一维模板，新型 MWNTs（多壁碳纳米管）与聚[（1,4-二乙炔基苯）-alt-9,9-双-（4-二苯基氨基苯基）芴共价官能化] (PDDF-g-MWNTs)，其中 MWNTs 的重量百分比约为 22.74，已成功合成。所制备的具有 Al/PDDF-g-MWNTs/ITO 涂层聚二甲基硅氧烷配置的柔性电子器件显示出典型的非易失性可重写存储器性能，具有超过 104 的更高开/关电流比，开启电压为 + 2.07 V 和 -2.45V 的关断电压。随着薄膜厚度的增加，器件的ON/OFF电流比从1×104（80nm）变为2×104（100nm）到4×104（130nm）。即使薄膜厚度从 80 nm 增加到 130 nm，开启和关闭电压几乎保持不变。在弯曲和拉伸时，相应的电子器件仍然表现出良好的稳定性和可靠性。在器件运行期间，电子在 PDDF-g-MWNT 中的传导过程中占主导地位。