Abstract Nano-wire (NW) field-effect transistor (FET) is expected to be a promising device in the semiconductor industry owing to its scalability and enhanced gate-controllability. Particularly, III–V compound semiconductor-based NW FETs enable low power consumption because of their high mobility. In this study, a novel charge injection memory (CIM) device is presented using intrinsic InAs NW with high electron mobility. A simple combination of InAs native oxide and SiO2 stack accommodates charge trapping sites to store a bit information, resulting in a memory window of over 5 V. This charge-trapping behavior of the InAs NW FET is confirmed for more than 1000 s at room temperature. The disclosure of the charge-trapping effect in the InAs CIM provides a glimpse of the simplified non-volatile memory devices based on III–V NWs. Additionally, the synaptic behavior of InAs CIM is investigated for neuromorphic application. Utilizing the synaptic characteristics of the InAs CIM, an artificial neural network is implemented for simple handwritten digit recognition. This indicates that the InAs NW FETs can be used as the hardware for neuromorphic computational architectures.

中文翻译：

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用于神经形态应用的 InAs 纳米线场效应晶体管中界面 InOx 层的非易失性存储行为

摘要 纳米线 (NW) 场效应晶体管 (FET) 由于其可扩展性和增强的栅极可控性，有望成为半导体行业中一种很有前途的器件。特别是，基于 III-V 族化合物半导体的 NW FET 因其高迁移率而能够实现低功耗。在这项研究中，提出了一种使用具有高电子迁移率的本征 InAs NW 的新型电荷注入存储器 (CIM) 器件。InAs 原生氧化物和 SiO2 堆栈的简单组合可容纳电荷俘获位点以存储位信息，从而产生超过 5 V 的存储器窗口。 InAs NW FET 的这种电荷俘获行为在室温下已被证实超过 1000 秒. InAs CIM 中电荷俘获效应的揭示提供了基于 III-V NW 的简化非易失性存储器件的一瞥。此外，InAs CIM 的突触行为被研究用于神经形态应用。利用 InAs CIM 的突触特性，人工神经网络实现了简单的手写数字识别。这表明 InAs NW FET 可用作神经形态计算架构的硬件。