A three-layer thin film capacitor was designed and fabricated with PVA/ZnO nanocomposite as dielectric material. Addition of ZnO nanoparticles showed change in dielectric constant, which varied with frequency and weight percentage. ZnO nanoparticles of weight percentage of 0.5% is chosen for the synthesis of nanoparticles with a grain size of 54 nm, using cost-effective and simple co-precipitation method. It is a low-cost method for large-scale production without impurities. The agglomeration was reduced by adding the starch molecules so that the O–H functional groups could hold together to the nanoparticles at the earlier nucleation stage and can be removed when purification by centrifugation is done. Fourier-transform infrared spectroscopy analysis showed peaks due to the O–H groups in the polymer backbone, CH 2 asymmetric and symmetric stretching, C–C stretching and Zn–O stretching, respectively, indicating formation of the proper film. From the profilometer, the thickness was calculated as 195.73 nm for the dielectric film. The fabricated device showed capacitance of 210 nF m −2 in par with the theoretical value (254.451 nF m −2 ) at 298 K.

中文翻译：

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基于PVA/ZnO纳米复合材料作为介电材料的新型薄膜电容器的制备

以PVA/ZnO纳米复合材料为介电材料，设计并制作了三层薄膜电容器。ZnO 纳米粒子的添加显示介电常数的变化，其随频率和重量百分比而变化。选择重量百分比为 0.5% 的 ZnO 纳米粒子来合成粒径为 54 nm 的纳米粒子, 使用具有成本效益和简单的共沉淀方法。它是一种低成本、无杂质的大规模生产方法。通过添加淀粉分子来减少团聚，以便 O-H 官能团可以在早期成核阶段与纳米颗粒结合在一起，并且可以在通过离心纯化完成时去除。傅里叶变换红外光谱分析显示由于聚合物骨架中的 O-H 基团而出现峰，CH 2 不对称和对称拉伸、C-C 拉伸和 Zn-O 拉伸分别表明形成了合适的薄膜。从轮廓仪计算出介电膜的厚度为 195.73 nm。制造的器件显示出 210 nF m -2 的电容，与 298 K 时的理论值 (254.451 nF m -2 ) 相当。