Thin films of platinum deposited by physical vapor deposition (PVD) processes such as evaporation and sputtering are used in many academic and industrial settings, for example to provide metallization when tolerance to corrosive thermal cycling is desired, or in electrocatalysis research. In this review, various practical considerations for platinum (Pt) metallization on both Si and SiO2 are placed in context with a comprehensive data review of diffusion measurements. The relevance of diffusion phenomena to the development of microstructure during deposition as well as the effect of microstructure on the properties of deposited films are discussed with respect to the Pt–Si system. Since Pt and Si readily form silicides, diffusion barriers are essential components of Pt metallization on Si, and various failure modes for diffusion barriers between Pt and Si are clarified with images obtained by electron microscopy. Adhesion layers for Pt films deposited on SiO2 are also considered.

通过物理气相沉积（PVD）工艺（例如蒸发和溅射）沉积的铂薄膜已在许多学术和工业环境中使用，例如在需要耐受腐蚀性热循环的条件下或在电催化研究中提供金属化。在这篇综述中，关于在Si和SiO 2上进行铂（Pt）金属化的各种实际考虑与扩散测量的全面数据回顾结合起来。关于Pt-Si体系，讨论了扩散现象与沉积过程中微结构发展的相关性，以及微结构对沉积膜性能的影响。由于Pt和Si容易形成硅化物，因此扩散阻挡层是Si上Pt金属化的基本成分，并且通过电子显微镜获得的图像可以清楚地说明Pt和Si之间的扩散阻挡层的各种失效模式。还考虑了沉积在SiO 2上的Pt膜的粘合层。