In this article, two kinds of shielded carbon nanotube (CNT) through‐silicon vias (TSV) are proposed and investigated for high‐density three‐dimensional integrated circuits (3‐D ICs). First, vertical aligned CNT array is inserted into a single hole, and two isolated metal pads, that is, the central circular and outer annular pads, are deposited onto the surface to make distinct conduction paths. The shielded CNT TSV, which can also be named as coaxial TSV, is formed, with the semiconducting CNTs utilized to suppress lateral conductance. Based on a similar concept, the shielded differential CNT TSV is developed. By virtue of the proposed shielded CNT TSVs, the chip area can be saved significantly. The equivalent circuit models are established for the proposed shielded CNT TSVs. A passive equalizer is designed to improve the signal quality for shielded differential CNT TSV. Finally, the potential applications of the proposed TSVs in 3‐D IC power distribution network design are investigated.

中文翻译：

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用于三维集成电路的基于碳纳米管的屏蔽硅通孔的电气建模

本文针对高密度三维集成电路（3-D IC）提出了两种屏蔽碳纳米管（CNT）穿过硅通孔（TSV）并进行了研究。首先，将垂直排列的CNT阵列插入单个孔中，并将两个隔离的金属焊盘（即中心圆形和外部环形焊盘）沉积到表面上，以形成不同的导电路径。形成屏蔽的CNT TSV，也可以称为同轴TSV，利用半导体CNT抑制横向电导。基于相似的概念，开发了屏蔽差分CNT TSV。借助于所提出的屏蔽的CNT TSV，可以显着节省芯片面积。为建议的屏蔽CNT TSV建立了等效电路模型。无源均衡器旨在改善屏蔽差分CNT TSV的信号质量。最后，研究了拟议的TSV在3D IC配电网络设计中的潜在应用。