Stretchable devices, which can intimately contact dynamic free‐form surfaces, show great promise for wearable and implantable devices for human beings and multifunctional electronic skins for soft robotics. Although some successful stretchable devices have been reported, there are still remaining issues; in particular, the fundamental requirements for wearable devices, including low‐voltage operation, operation speed, mechanical stretchability and robustness, and easy circuit design, are needed to be satisfied simultaneously. Here, a local strain suppression layer (L‐SSL) is introduced into all‐carbon nanotube (CNT) stretchable thin‐film transistors (TFTs) and integrated circuits (ICs) to address these issues. The L‐SSL, which has a high Young's modulus, is placed on top of the active channel region to suppress the induced local strain. The resulting CNT TFTs show no drain current degradation under externally applied tensile strain of up to 35%. Furthermore, stretchable all‐CNT ICs, such as inverters and ring oscillators, can operate at low supply voltage as 0.7 V, because high‐k material can be used underneath the L‐SSL. Biaxial stretching, an indispensable ability for wearable devices on 3D deformable surfaces such as the human body, is also achieved. The all‐CNT devices, equipped with an L‐SSL, demonstrate potential for strain‐insensitive stretchable devices with low‐voltage operation.

中文翻译：

---

具有局部应变抑制层的低压可操作且对应变不敏感的可拉伸全碳纳米管集成电路

可伸展的设备可以紧密接触动态自由曲面，为人类可穿戴和可植入设备以及用于软机器人的多功能电子皮肤提供了广阔的前景。尽管已经报道了一些成功的可拉伸设备，但是仍然存在问题。特别是，需要同时满足可穿戴设备的基本要求，包括低压操作，操作速度，机械拉伸性和耐用性以及易于电路设计。在这里，将局部应变抑制层（L‐SSL）引入全碳纳米管（CNT）可拉伸薄膜晶体管（TFT）和集成电路（IC）中，以解决这些问题。具有高杨氏模量的L‐SSL被放置在有源通道区域的顶部，以抑制感应的局部应变。所得的CNT TFT在外部施加的高达35％的拉伸应变下，无漏极电流下降。此外，可拉伸的全CNT IC（例如反相器和环形振荡器）可以在0.7 V的低电源电压下工作，因为可在L‐SSL下方使用k种材料。还实现了双轴拉伸，这对于可穿戴设备在3D可变形表面（例如人体）上是必不可少的。配备有L-SSL的全碳纳米管设备证明了在低电压操作下对应变不敏感的可拉伸设备的潜力。