Abstract β-Ga2O3 films were grown on (0001) sapphire substrates by low-pressure MOCVD. The effects of growth pressure on the growth rate, surface morphology and optical properties of β-Ga2O3 thin films were investigated. XRD showed that the β-Ga2O3 films grown preferentially along the (-201) crystal plane family were obtained, and the increase in growth pressure led to a decrease in growth rate, consistent with the SEM results. AFM measurements indicated that the increase in growth pressure reduced the grain size and RMS roughness. Optical transmission spectroscopy demonstrated that the average transmittance of all films in the visible range exceeded 75%, and the optical bandgap at 20, 30 and 40 Torr were 4.95, 4.93 and 4.91 eV, respectively. XPS revealed that the Ga 2p peak and O 1s peak blue shift as the growth pressure. Through RT-Raman spectroscopy, the low-frequency and high-frequency Raman vibration modes of β-Ga2O3 were detected.

中文翻译：

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生长压力对沉积在(0001)蓝宝石衬底上的β-Ga2O3薄膜特性的影响

摘要 采用低压 MOCVD 在 (0001) 蓝宝石衬底上生长了 β-Ga2O3 薄膜。研究了生长压力对β-Ga2O3薄膜生长速率、表面形貌和光学性能的影响。XRD 表明获得了优先沿 (-201) 晶面族生长的 β-Ga2O3 薄膜，生长压力的增加导致生长速率的降低，与 SEM 结果一致。AFM 测量表明，生长压力的增加降低了晶粒尺寸和 RMS 粗糙度。光学透射光谱表明，所有薄膜在可见光范围内的平均透射率均超过 75%，在 20、30 和 40 Torr 下的光学带隙分别为 4.95、4.93 和 4.91 eV。XPS 显示 Ga 2p 峰和 O 1s 峰蓝移作为生长压力。