Abstract The surface morphology and crystalline quality of AlN epilayers grown by high-temperature hydride vapor phase epitaxy (HVPE) with various growth rate were investigated by AFM, XRD and cross-sectional TEM analyses. The growth rate of AlN films were controlled by regulating the flux rates of HCl and NH3 while keeping V/III ratio constant. The surface morphology of as-grown AlN films revealed that the control of the appropriate growth rate is beneficial to obtain uniform step-flow morphology. And the crystalline quality of AlN layers has been improved at an appropriate growth rate, since the growth mode of AlN under such condition is beneficial to the bending of dislocations. The dislocation bending and reduction mechanism has also been demonstrated.

中文翻译：

---

流速对氢化物气相外延生长的 AlN 外延层的影响

摘要 通过原子力显微镜、XRD 和横截面 TEM 分析研究了不同生长速率下通过高温氢化物气相外延 (HVPE) 生长的 AlN 外延层的表面形貌和结晶质量。通过调节 HCl 和 NH3 的流量速率同时保持 V/III 比值恒定来控制 AlN 薄膜的生长速率。生长的 AlN 薄膜的表面形貌表明，控制适当的生长速率有利于获得均匀的阶梯流形貌。并且在适当的生长速率下，AlN 层的晶体质量得到了改善，因为在这种条件下 AlN 的生长模式有利于位错的弯曲。位错弯曲和还原机制也已被证明。