Abstract

Theoretical and experimental data are reported for the distribution of hydrogen in silicon in SiO₂–Si structures after the implantation of hydrogen. Hydrogen is implanted under conditions used in preparing silicon-on-insulator structures by the hydrogen transfer technology. A technique for quantitative estimation of implanted hydrogen high concentrations in silicon using secondary-ion mass spectrometry is suggested. It includes the quantitative calibration of the hydrogen atom concentration and normalization of the depth of analysis from sputtering time. Data for the implanted hydrogen depth distribution in silicon and in Si–SiO₂ structures are presented. The lateral uniformity and temporal stability of implanted structures have been monitored.

中文翻译：

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二次离子质谱法分析硅中注入的氢分布以及绝缘体上硅结构的杂质组成

摘要

氢注入后，报道了SiO ₂ -Si结构中硅中氢的分布的理论和实验数据。通过氢转移技术，在用于制备绝缘体上硅结构的条件下注入氢。建议使用二次离子质谱法定量估算硅中注入的氢高浓度的技术。它包括氢原子浓度的定量校准和从溅射时间开始的分析深度的归一化。给出了硅和Si-SiO ₂结构中注入的氢深度分布的数据。已经监测了植入结构的横向均匀性和时间稳定性。