Abstract

The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-μm-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.

中文翻译：

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离子辐照下形成的集成电阻对氮化铌纳米导体超导跃迁的影响

摘要

已经研究了在纳米线的照射下形成的集成电阻器对其超导转变的影响。已经考虑了在涂有0.3μm厚的热氧化硅层的单晶硅衬底上和在蓝宝石衬底上由5nm厚的NbN膜制成的宽度为75-20000 nm的氮化铌纳米线。描述了内置电阻区域对从超导状态转换到正常状态的临界电流的影响。