Abstract

Local resistive switching in a contact between the probe of an atomic force microscope (AFM) and ZrO₂(Y) films (including with a Ta₂O₅ sublayer) on conducting substrates has been studied. Switching has been initiated by triangular voltage pulses on which an rf sine-wave signal was imposed. The dependence of the difference between currents through the AFM probe in low- and high-ohmic states of dielectric films on the frequency of the rf sine-wave signal exhibits maxima at characteristic frequencies corresponding to hops of O^2– ions between oxygen vacancies in ZrO₂(Y) and Ta₂O₅ at 300 K. This effect is related to the resonance activation of O^2– ion migration over oxygen vacancies by an external rf electric field.

中文翻译：

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ZrO 2（Y）薄膜中电阻开关共振激活的原子力显微镜研究

摘要

研究了原子力显微镜（AFM）的探针和导电衬底上ZrO ₂（Y）膜（包括Ta ₂ O ₅子层）之间的接触中的局部电阻转换。开关已通过施加了正弦波信号的三角电压脉冲启动。在介电膜的低欧姆和高欧姆状态下，通过AFM探针的电流之间的差异对rf正弦波信号频率的依赖性在与ZrO中的氧空位之间的O ^2-离子跃变相对应的特征频率处表现出最大值₂（Y）和300 K下的Ta ₂ O _5。此效应与O ^2–的共振活化有关。 外部射频电场在氧空位上的离子迁移。