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Efficient organic solar cells with low-temperature in situ prepared Ga 2 O 3 or In 2 O 3 electron collection layers
Science China Materials ( IF 6.8 ) Pub Date : 2020-11-13 , DOI: 10.1007/s40843-020-1514-3
Yiming Bai , Rongkang Shi , Yinglong Bai , Fuzhi Wang , Jun Wang , Tasawar Hayat , Ahmed Alsaedi , Zhan’ao Tan

Facile synthesis of an interfacial layer in organic solar cells (OSCs) is important for broadening material designs and upscaling photovoltaic conversion efficiency (PCE). Herein, a mild solution process of spin-coating In(acac)3 and Ga(acac)3 isopropanol precursors followed by low-temperature thermal treatment was developed to fabricate In2O3 and Ga2O3 cathode buffer layers (CBLs). The introduction of In2O3 or Ga2O3 CBLs endows PM6:Y6-based OSCs with outstanding performance and high PCEs of 16.17% and 16.01%, respectively. Comparison studies present that the In2O3 layer possesses a work function (WF) of 4.58 eV, which is more favorable for the formation of ohmic contact compared with the Ga2O3 layer with a WF of 5.06 eV and leads to a higher open circuit voltage for the former devices. Electrochemical impedance spectroscopy was performed to reveal how In2O3 and Ga2O3 affect the internal charge transfer and the origin of their performance difference. Although In2O3 possesses lower series resistance loss, Ga2O3 has a higher recombination resistance, which enhances the device fill factor and compensates for its series resistance loss to some extent. Comparative analysis of the photo-physics of In2O3 and Ga2O3 suggests that both are excellent CBLs for highly efficient OSCs.



中文翻译:

具有低温原位制备的Ga 2 O 3或In 2 O 3电子收集层的高效有机太阳能电池

易于合成有机太阳能电池(OSC)中的界面层对于拓宽材料设计和提高光伏转换效率(PCE)至关重要。在此,开发了旋涂In(acac)3和Ga(acac)3异丙醇前体并随后进行低温热处理的温和溶液工艺,以制造In 2 O 3和Ga 2 O 3阴极缓冲层(CBL)。In 2 O 3或Ga 2 O 3 CBL的引入使基于PM6:Y6的OSC具有出色的性能和高PCE,分别达到16.17%和16.01%。比较研究表明,In 2O 3层的功函数(WF)为4.58 eV,与WF为5.06 eV的Ga 2 O 3层相比,它更有利于形成欧姆接触,并导致前者的开路电压更高。进行了电化学阻抗谱分析,以揭示In 2 O 3和Ga 2 O 3如何影响内部电荷转移及其性能差异的根源。尽管In 2 O 3具有较低的串联电阻损耗,但Ga 2 O 3具有更高的复合电阻,从而提高了器件的填充系数,并在一定程度上补偿了其串联电阻损耗。对In 2 O 3和Ga 2 O 3的光物理性质的比较分析表明,对于高效OSC,两者都是出色的CBL。

更新日期:2020-11-18
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