The continuous downscaling in CMOS devices has increased leakage power and limited the performance to a few GHz. The research goal has diverted from operating at high frequencies to deliver higher performance in essence with lower power. CMOS based on-chip memories consumes significant fraction of power in modern processors. This paper aims to explore the suitability of beyond CMOS, emerging magnetic memories for the use in memory hierarchy, attributing to their remarkable features like nonvolatility, high-density, ultra-low leakage and scalability. NVSim, a circuit-level tool, is used to explore different design layouts and memory organizations and then estimate the energy, area and latency performance numbers. A detailed system-level performance analysis of STT-MRAM and SOT-MRAM technologies and comparison with 22[Formula: see text]nm SRAM technology are presented. Analysis infers that in comparison to the existing 22[Formula: see text]nm SRAM technology, SOT-MRAM is more efficient in area for memory size [Formula: see text][Formula: see text]KB, speed and energy consumption for cache size [Formula: see text][Formula: see text]KB. A typical 256[Formula: see text]KB SOT-MRAM cache design is 27.74% area efficient, 2.97 times faster and consumes 76.05% lesser leakage than SRAM counterpart and these numbers improve for larger cache sizes. The article deduces that SOT-MRAM technology has a promising potential to replace SRAM in lower levels of computer memory hierarchy.

中文翻译：

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低功耗片上高速缓存的自旋电子存储器比较分析

CMOS 器件的不断缩小增加了泄漏功率并将性能限制在几 GHz。研究目标已经从高频运行转向以更低的功耗提供更高的性能。基于 CMOS 的片上存储器在现代处理器中消耗了很大一部分功率。本文旨在探索超越 CMOS 的新兴磁存储器在存储器层次结构中的适用性，归因于它们的显着特性，如非易失性、高密度、超低泄漏和可扩展性。NVSim 是一种电路级工具，用于探索不同的设计布局和内存组织，然后估计能量、面积和延迟性能数字。STT-MRAM和SOT-MRAM技术的详细系统级性能分析并与22[公式：见正文]nm SRAM技术介绍。分析推断，与现有的22[公式：见正文]nm SRAM技术相比，SOT-MRAM在内存大小上的面积效率更高[公式：见正文][公式：见正文]缓存的KB、速度和能耗大小 [公式：见正文][公式：见正文]KB。典型的 256[公式：见正文]KB SOT-MRAM 缓存设计的面积效率为 27.74%，速度比 SRAM 对应物快 2.97 倍，泄漏量减少 76.05%，并且这些数字随着更大的缓存大小而提高。文章推断，SOT-MRAM 技术具有在较低级别的计算机存储器层次结构中替代 SRAM 的潜力。缓存大小的速度和能耗 [公式：见正文][公式：见正文]KB。典型的 256[公式：见正文]KB SOT-MRAM 缓存设计的面积效率为 27.74%，速度比 SRAM 对应物快 2.97 倍，泄漏量减少 76.05%，并且这些数字随着更大的缓存大小而提高。文章推断，SOT-MRAM 技术具有在较低级别的计算机存储器层次结构中替代 SRAM 的潜力。缓存大小的速度和能耗 [公式：见正文][公式：见正文]KB。典型的 256[公式：见正文]KB SOT-MRAM 缓存设计的面积效率为 27.74%，速度比 SRAM 对应物快 2.97 倍，泄漏量减少 76.05%，并且这些数字随着更大的缓存大小而提高。文章推断，SOT-MRAM 技术具有在较低级别的计算机存储器层次结构中替代 SRAM 的潜力。