A practical model, adequate for full reproduction of inhomogeneous Schottky diodes’ forward characteristics over wide high-temperature and bias ranges, is proposed. According to this ${p}$ -diode model, the Schottky contact current is considered to flow through ${m}$ parallel-connected internal diodes, each with stable, constant barrier height and specific series resistance (both main model parameters). The value of ${m}$ , required to reproduce the entire electrical forward behavior of a non-uniform Schottky contact, is directly connected to a particular model parameter ( $p_{eff}$ ), used to define the inhomogeneity degree. The p-diode model was tested on forward characteristics measured for both Ni and commercial Ti Schottky diodes on 4H-SiC, which exhibited varying degrees of inhomogeneity. Excellent replication of experimental curves was achieved for all investigated samples, even those with obvious irregularities, such as “humps”, explained in the model by the series resistances’ influence. In the case of m = 1, the proposed model does not produce identical results with the conventional model of a homogeneous Schottky contact if $p_{eff}\ne 0$ . The value of this parameter indicates how much of an inhomogeneous contact’s area is essentially used for current conduction.

中文翻译：

---

4H-SiC 肖特基二极管特性在宽高温和正向偏置范围内的增强非均匀性建模

提出了一种实用模型，足以在较宽的高温和偏置范围内完全再现非均匀肖特基二极管的正向特性。根据这个 ${p}$ -二极管模型，肖特基接触电流被认为流过 ${m}$ 并联的内部二极管，每个二极管都具有稳定、恒定的势垒高度和特定的串联电阻（两个主要模型参数）。的价值 ${m}$ ，需要重现非均匀肖特基接触的整个电气正向行为，直接连接到特定的模型参数（ $p_{eff}$ )，用于定义不均匀度。这p-二极管模型对 Ni 和商用 Ti 肖特基二极管在 4H-SiC 上测量的正向特性进行了测试，这些二极管表现出不同程度的不均匀性。所有研究的样品都实现了实验曲线的极好复制，即使是那些具有明显不规则性的样品，例如“驼峰”，在模型中由串联电阻的影响解释。在 m = 1 的情况下，所提出的模型不会产生与均匀肖特基接触的常规模型相同的结果，如果 $p_{eff}\ne 0$ . 该参数的值表明有多少非均质接触面积主要用于电流传导。