Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer,ACS Energy Letters

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Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer
ACS Energy Letters ( IF 19.3 ) Pub Date : 2020-11-16 , DOI: 10.1021/acsenergylett.0c02193
Ji Eun Yeom ₁ , Dong Hyun Shin ₁ , Raju Lampande ₁ , Young Hun Jung ₁ , Nagarjuna Naik Mude ₁ , Jung Hwan Park ₂ , Jang Hyuk Kwon ₁

Affiliation

Here, we report efficient and stable indium phosphide (InP) based inverted red quantum dot light-emitting diodes (QLEDs) using a new high mobility and deep HOMO level hole transport layer (HTL) and an optimized sol–gel ZnMgO layer. A new hole transport material, DBTA, containing rigid dibenzothiophene and tertiary amine units has been designed with high hole mobility and a deep HOMO level to inject holes faster into the InP-QDs. Also, to decrease the electron transporting property of the ZnMgO NPs, a sol–gel ZnMgO layer with optimum magnesium content (17%), low-temperature annealing (180 °C), and a self-aging process is used on the transparent electrode. The high mobility DBTA and an optimized sol–gel Zn_0.83Mg_0.17O layer with the self-aging process are responsible for achieving good charge balance and suppressing nonradiative losses in InP-QLED. The fabricated QLED with DBTA and optimized sol–gel Zn_0.83Mg_0.17O exhibited an external quantum efficiency of 21.8%, current efficiency of 23.4 cd/A, and operating lifetime (LT₅₀) of 1095 h at 1000 cd/m².

中文翻译：

具有新的高迁移率和深HOMO能级空穴传输层的良好电荷平衡倒置红色InP / ZnSe / ZnS-量子点发光二极管

在这里，我们报告了一种高效，稳定的基于磷化铟（InP）的倒置红色量子点发光二极管（QLED），它使用了新的高迁移率和深HOMO能级空穴传输层（HTL）和优化的溶胶-凝胶ZnMgO层。一种包含刚性二苯并噻吩和叔胺单元的新型空穴传输材料DBTA被设计为具有高空穴迁移率和很深的HOMO水平，可以更快地将空穴注入InP-QD中。另外，为了降低ZnMgO NPs的电子传输性能，在透明电极上使用了具有最佳镁含量（17％），低温退火（180°C）和自时效过程的溶胶-凝胶ZnMgO层。。高迁移率DBTA和优化的溶胶凝胶Zn _0.83 Mg _0.17具有自老化过程的O层负责实现良好的电荷平衡并抑制InP-QLED中的非辐射损耗。具有DBTA和优化的溶胶-凝胶锌_0.83 Mg _0.17 O的QLED的外部量子效率为21.8％，电流效率为23.4 cd / A，在1000 cd / m ^2的工作寿命（LT ₅₀）为1095 h 。

更新日期：2020-12-11

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