ABSTRACT

The breakdown characteristics of Al_0.295Ga_0.705N/GaN high electron mobility transistors (HEMTs) have been studied with Al_0.04Ga_0.96N blocking layer and gate field plate technique. L_G = 0.4 µm HEMT with 0.8 µm SiN passivation shows 2.16 A/mm drain current (I_DSmax) at gate voltage, V_GS = 2 V. The breakdown voltage of the HEMT is investigated for various field plate length (L_FP = 1, 1.25, 1.5, 1.75, and 2 µm) and the device shows the maximum V_BR of 871 V and JFoM of 34.88 THz-V for a gate-field plate length (L_FP) = 1.75 µm. The device performance has also been studied for the high-k passivation HfO₂ layer with an identical structure. The device shows an enhanced V_BR of 912 V with JFoM of 25.53 THz-V. These results indicate that the proposed Al_0.295Ga_0.705N/GaN/Al_0.04Ga_0.96N double heterojunction (DH) HEMTs are suitable devices for next-generation high-power microwave applications.

摘要

使用Al _0.04 Ga _0.96 N阻挡层和栅场板技术研究了Al _0.295 Ga _0.705 N/GaN高电子迁移率晶体管(HEMT)的击穿特性。 具有 0.8 µm SiN 钝化层的L _G = 0.4 µm HEMT在栅极电压 V _GS  = 2 V 下显示 2.16 A/mm 漏极电流 (I _DSmax ) 。针对不同场板长度 (L _FP  = 1 ) 研究了 HEMT 的击穿电压、1.25、1.5、1.75和 2 µm)，并且器件显示了871 V的最大 V _BR和 34.88 THz-V 的 JFoM 对于栅场板长度 (L _FP) = 1.75 µm。还研究了具有相同结构的高 k 钝化 HfO ₂层的器件性能。该器件显示增强的 V _BR为 912 V，JFoM 为 25.53 THz-V。这些结果表明，所提出的 Al _0.295 Ga _0.705 N/GaN/Al _0.04 Ga _0.96 N 双异质结 (DH) HEMT 是适用于下一代高功率微波应用的器件。