The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to get optimum device dimensions. The present work deals with the design and simulation of hinge structure-based Graphene oxide (GO) NEM switch. The Finite Element Modeling (FEM) of the NEM switch for different design parameters have performed in COMSOL Multiphysics. Moreover, the radio frequency (RF) performance of the switch structure with minimum pull-in voltage has also been investigated. The results state that pull-in voltage and von Mises stress exhibit a negative correlation with beam length and positive correlation with beam thickness and air gap. Furthermore, a long and thin suspended beam requires low pull-in voltage and undergoes less von Mises stress. The von Mises stress exhibits a strong effect at beam edges, perforation corners, and beam-top electrode interface due to edge termination effect. The present work facilitates optimisation of design parameters of a NEM switch that requires low pull-in voltage, undergoes less von Mises stress, and exhibits good RF performance.

纳米机电 (NEM) 开关的建模和仿真对于获得最佳器件尺寸是必不可少的。目前的工作涉及基于铰链结构的氧化石墨烯 (GO) NEM 开关的设计和模拟。NEM 开关的不同设计参数的有限元建模 (FEM) 已在 COMSOL Multiphysics 中执行。此外，还研究了具有最小吸合电压的开关结构的射频 (RF) 性能。结果表明，吸合电压和 von Mises 应力与梁长度呈负相关，与梁厚度和气隙呈正相关。此外，又长又细的悬梁需要低吸合电压，承受的冯米塞斯应力也较小。von Mises 应力在梁边缘、穿孔角、和束顶电极界面由于边缘终止效应​​。目前的工作有助于优化需要低吸合电压、承受较小 von Mises 应力并具有良好 RF 性能的 NEM 开关的设计参数。