Single‐crystal gallium nitride (GaN) thin films were grown using a graphene mask via multiple epitaxial lateral overgrowth (multiple‐ELOG). During the growth process, the graphene mask self‐decomposed to enable the emergence of a GaN film with a thickness of several hundred nanometres. This is in contrast to selective area growth of GaN using an SiO₂ mask leading to the well known hexagonal‐pyramid shape under the same growth conditions. The multiple‐ELOG GaN had a single‐crystalline wurtzite structure corresponding to the crystallinity of the GaN template, which was confirmed with electron backscatter diffraction measurements. An X‐ray diffraction rocking curve of the asymmetric 102 reflection showed that the FWHM for the multiple‐ELOG GaN decreased to 405 from 540′′ for the underlying GaN template. From these results, the self‐decomposition of the graphene mask during ELOG was experimentally proven to be affected by the GaN decomposition rather than the high‐temperature/H₂ growth conditions.

中文翻译：

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使用图形化的石墨烯掩模通过金属有机化学气相沉积实现GaN薄膜的多个外延横向过生长

使用石墨烯掩膜通过多次外延横向过生长（multiple-ELOG）来生长单晶氮化镓（GaN）薄膜。在生长过程中，石墨烯掩膜会自分解，从而出现厚度为数百纳米的GaN膜。这与使用SiO ₂的GaN的选择性区域生长相反在相同的生长条件下形成众所周知的六角锥形状的面罩。多ELOG GaN具有与GaN模板的结晶度相对应的单晶纤锌矿结构，这已通过电子背散射衍射测量得到了证实。非对称102反射的X射线衍射摇摆曲线表明，多重ELOG GaN的FWHM从下面的GaN模板的540''降低到405。从这些结果可以证明，ELOG期间石墨烯掩模的自分解受GaN分解的影响，而不是受高温/ H ₂生长条件的影响。