当前位置: X-MOL 学术Opt. Laser Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Numerical simulation of all-optical logic functions at micrometer scale by using plasmonic Metal-Insulator-Metal (MIM) waveguides
Optics & Laser Technology ( IF 4.6 ) Pub Date : 2020-11-17 , DOI: 10.1016/j.optlastec.2020.106697
Lokendra Singh , Guo Zhu , G. Mohan Kumar , D. Revathi , Prakash Pareek

All-optical integrated circuits are quite useful in the regime of ultrafast computing to overcome the limitations of existing electronic components. In this work, we have modelled two different all-optical integrated circuits to validate the operations of OR, AND, NOR, XOR, XNOR logic gates and half-adder circuit. To cascade the integrated circuits, a plasmonic metal–insulator-metal (MIM) waveguide based Mach-Zehnder interferometer (MZI) has been used. The signal switching is attained by using MEH-PPV [poly(2-methoxy-5-(28-ethylhexyloxy)-PPV)] as nonlinear Kerr material in one linear arm of MZI. The relative linear permittivity, response time and RI of nonlinear Kerr material are 2.7225, 2.0 e−15 s, and 1.67, respectively. The switching of signal across the output ports of MZI depends on the principle of self-phase and cross-phase modulation, which depends on the power of input signals. Signal power of 0.326 W/µm and 0.828 W/µm is used for low and high intensity which corresponds to logic level ‘0′ and ‘1′, respectively. The projected integrated circuits are analyzed at the wavelength of 1550 nm with transverse magnetic (TM) polarization under the contour of perfect matched layer (PML) as boundary conditions. The results conclude that the extinction ratio (ER) of single MZI is gradually decreasing with respect to the increase in power difference. For proposed design of single MZI the attained value of ER is 24 dB at the power difference of 0.3 dB. The authentication of proposed integrated circuits is done by using finite difference time domain (FDTD) based method.



中文翻译:

使用等离子金属-绝缘体-金属(MIM)波导的微米级全光逻辑功能的数值模拟

全光集成电路在超快速计算领域中非常有用,可以克服现有电子组件的局限性。在这项工作中,我们对两个不同的全光集成电路进行了建模,以验证“或”,“与”,“或非”,“异或”,“异或”逻辑门和半加法器电路的操作。为了级联集成电路,已经使用了基于等离子体金属-绝缘体-金属(MIM)波导的Mach-Zehnder干涉仪(MZI)。通过使用MEH-PPV [聚(2-甲氧基-5-(28-乙基己基氧基)-PPV)]作为MZI的一个线性臂中的非线性Kerr材料来实现信号切换。非线性Kerr材料的相对线性介电常数,响应时间和RI为2.7225,2.0 e -15s和1.67。跨MZI输出端口的信号切换取决于自相位和交叉相位调制的原理,该原理取决于输入信号的功率。0.326 W / µm和0.828 W / µm的信号功率用于低强度和高强度,分别对应于逻辑电平'0'和'1'。以完美匹配层(PML)的轮廓为边界条件,以1550 nm的波长分析投影的集成电路,并具有横向磁(TM)极化。结果得出结论,单个MZI的消光比(ER)随功率差的增加而逐渐减小。对于单个MZI的建议设计,在0.3 dB的功率差下,ER的达到值为24 dB。

更新日期:2020-11-17
down
wechat
bug