Abstract CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range of technological applications in which optoelectronic devices take a special position. The present paper reports the structural and optical characteristics of thermally evaporated CdSe thin films. XRD pattern exhibited preferential orientation along (111) plane while atomic composition analyses resulted in the ratio of Cd/Se as closer to 1.0. Temperature-dependent band gap characteristics of CdSe thin films were investigated for the first time by carrying out transmission experiments in the 10–300 K range. The analyses showed that direct band gap energy of the compound decreases from 1.750 (at 10 K) to 1.705 eV (at 300 K). Varshni model was successfully applied to the temperature-band gap energy dependency and various optical constants were determined. Raman spectrum of CdSe thin films was also presented to understand the vibrational characteristics of the compound. The present paper would provide worthwhile data to researchers especially studying on optoelectronic device applications of CdSe thin films.

中文翻译：

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温度对 CdSe 薄膜光学特性的影响

摘要 CdSe是II-VI型半导体家族的重要成员之一，具有广泛的技术应用，在光电器件中占有特殊地位。本论文报告了热蒸发 CdSe 薄膜的结构和光学特性。XRD 谱显示沿 (111) 面的优先取向，而原子组成分析导致 Cd/Se 的比率接近 1.0。通过在 10-300 K 范围内进行透射实验，首次研究了 CdSe 薄膜的温度相关带隙特性。分析表明，该化合物的直接带隙能量从 1.750（10 K）降低到 1.705 eV（300 K）。Varshni 模型成功应用于温度-带隙能量依赖性，并确定了各种光学常数。还提供了 CdSe 薄膜的拉曼光谱，以了解化合物的振动特性。本文将为研究人员特别是研究 CdSe 薄膜的光电器件应用提供有价值的数据。